Radiation-induced leakage currents in n-channel Silicon-on-sapphire MOST's
- 1 November 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (11) , 1277-1284
- https://doi.org/10.1109/t-ed.1977.18998
Abstract
This paper describes an experimental study of the source-to-drain leakage currents in silicon-on-sapphire n-channel MOS transistors before and after exposure to ionizing radiation. The leakage currents are studied as a function of device geometry and various processing parameters. The effects on the leakage currents of wet and dry gate oxidations, the transistor channel length, and optical (UV) bleaching are described. A model of hole traps in the Al2O3is proposed to explain the radiation-induced leakage currents.Keywords
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