Multiphonon Nonradiative Recombination due to Successive Electron and Hole Capture by a Deep-Level Defect in Semiconductors
- 2 November 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (18) , 1333-1336
- https://doi.org/10.1103/physrevlett.47.1333
Abstract
A rate is calculated of nonradiative recombination in which a deep-level defect captures first an injected minority carrier and then a majority one by multiphonon emission. In many cases the second capture occurs in a very short time, of the order of a phonon period, during lattice relaxation toward a new equilibrium configuration triggered by the first capture. The mechanism gives a model of the so-called killer centers which cannot be detected by measurements of trapped carriers.Keywords
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