Observation of confinement-dependent exciton binding energy of GaN quantum dots
- 24 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (8) , 1104-1106
- https://doi.org/10.1063/1.122098
Abstract
The photoluminescence emission peak energy of GaN quantum dots was observed to shift to higher energy with decreasing quantum dot size. This effect was found to be a combination of a blueshift from the confinement-induced shift of the electronic levels and a redshift from the increased Coulomb energy induced by a compression of the exciton Bohr radius. From this observation, absolute values of the exciton binding energy as a function of quantum dot size are determined.Keywords
This publication has 15 references indexed in Scilit:
- Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactantApplied Physics Letters, 1996
- Residual strain in GaN epilayers grown on sapphire and (6H)SiC substratesApplied Physics Letters, 1996
- Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopyApplied Physics Letters, 1996
- Excitonic enhancement of optical gain in quantum wellsPhysical Review B, 1995
- Low threshold, large
T
o
injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994
- Lasing action of Ga 0.67 In 0.33 As/GaInAsP/InPtensile-strained quantum-box laserElectronics Letters, 1994
- Theory of the linear and nonlinear optical properties of semiconductor microcrystallitesPhysical Review B, 1987
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974
- Exciton luminescence in lead iodide lifetime, intensity and spectral position dependence on temperatureJournal of Physics and Chemistry of Solids, 1969