Electrical properties of diffused zinc on SiO2-Si MOS structures
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5) , 411-415
- https://doi.org/10.1016/0038-1101(69)90098-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of gold on surface properties and leakage current of MOS transistorsSolid-State Electronics, 1967
- Effect of diffused oxygen and gold on surface properties of oxidized siliconSolid-State Electronics, 1967
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Double-Acceptor Behavior of Zinc in SiliconPhysical Review B, 1957