Simple model for proton-induced latch-up
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1947-1951
- https://doi.org/10.1109/23.273459
Abstract
Computer simulations show, that the strong angular dependence exhibited by proton-induced single-event latch-up can be explained by a simple mechanism. Latch-up occurs if, and only if, more than some threshold amount of energy is deposited within the sensitive volume. A procedure for determining the SEU parameters by comparing SEU cross sections and CUPID simulations at different incident energies and angles of incidence is described. The thickness of the sensitive volume and the value of the critical charge determined for the NEC 4464, a 64 Kbit CMOS SRAM, agrees with the measured thickness of the p-cell and the value of the threshold LET determined with heavy ions.This publication has 4 references indexed in Scilit:
- Proton induced spallation reactionsRadiation Physics and Chemistry, 1994
- A verified proton induced latch-up in space (CMOS SRAM)IEEE Transactions on Nuclear Science, 1992
- The on-orbit measurements of single event phenomena by ETA-V spacecraftIEEE Transactions on Nuclear Science, 1991
- Proton-Induced Nuclear Reactions in SiliconIEEE Transactions on Nuclear Science, 1981