Deep level transient spectroscopy of high-energy heavy ion irradiation-induced defects in n-type germanium
- 15 July 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (2) , 868-871
- https://doi.org/10.1063/1.354879
Abstract
Swift heavy ion irradiation‐induced defects have been studied in n‐type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be at Ec−0.22, Ec−0.275, Ec−0.29, Ec−0.32, and Ec−0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200 °C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.This publication has 16 references indexed in Scilit:
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