Precise control of sheet resistance in boron doping of silicon by excimer laser irradiation
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (12) , 702-703
- https://doi.org/10.1109/55.116961
Abstract
To control the sheet resistance in boron doping of silicon by the excimer laser irradiation, two-step doping consisting of the deposition of boron films and the incorporation of dopant atoms is proposed. These processes are carried out in the same chamber successively. Precise control of the sheet resistance can be realized by this method and a very low sheet resistance can also be obtained by only one pulse irradiation for the melting of silicon.Keywords
This publication has 9 references indexed in Scilit:
- Boron doping of silicon by ArF excimer laser irradiation in B2H6Journal of Applied Physics, 1990
- Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laserApplied Surface Science, 1989
- Surface doping of semiconductors by pulsed-laser irradiation in reactive atmosphereApplied Physics A, 1988
- Numerical simulation of the gas immersion laser doping (GILD) process in siliconIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- ArF excimer laser doping of boron into siliconJournal of Applied Physics, 1987
- Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctionsJournal of Applied Physics, 1987
- Ultra-shallow high-concentration boron profiles for CMOS processingIEEE Electron Device Letters, 1985
- Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperaturesApplied Physics Letters, 1982
- Electrical properties of laser chemically doped siliconApplied Physics Letters, 1981