Magnetic field dependence of electronic Raman scattering from ZnTe: Li and ZnTe: As
- 15 March 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 19 (6) , 3053-3056
- https://doi.org/10.1103/physrevb.19.3053
Abstract
The field dependence of Raman scattering from , , and transitions of arsenic and lithium acceptors in zinc telluride has been measured at magnetic fields up to 14 T. Eight electronic and two impurity vibrational transitions are identified in ZnTe: As. Seven of the electronic transitions originate in the ground state. The eighth originates from the photoexcited level and terminates on the vibronic state + LO.
Keywords
This publication has 13 references indexed in Scilit:
- The nature of the predominant acceptors in high quality zinc tellurideJournal of Luminescence, 1978
- Spin-flip scattering in ZnTe—theoreticalPhysical Review B, 1977
- Spin-flip scattering in ZnTe—experimentalPhysical Review B, 1977
- Electronic Raman scattering and infrared absorption by arsenic acceptors in ZnTeSolid State Communications, 1975
- Spin-Flip—Plus—Phonon Raman Scattering: A New Second-Order Scattering ProcessPhysical Review Letters, 1975
- Raman scattering from plasmon-LO phonon coupled modes in ZnTeSolid State Communications, 1974
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973
- Magnetospectroscopy of shallow donors in GaAsSolid State Communications, 1969
- Fine Structure and Magneto-Optic Effects in the Exciton Spectrum of Cadmium SulfidePhysical Review B, 1961