A capacitor-over-bit-line (COB) cell with a hemispherical-grain storage node for 64 Mb DRAMs
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 655-658
- https://doi.org/10.1109/iedm.1990.237114
Abstract
A novel capacitor-over-bit-line (COB) cell with a hemispherical-grain (HSG) poly-Si storage node has been developed. This memory cell provides large storage capacitance by increasing the effective surface area of a simple storage node and is manufacturable by optical delineation. The feasibility of the COB cell for 64-Mb DRAMs has been verified by a 64-kb test memory with 1.8- mu m/sup 2/ cells using a 0.4- mu m design rule, storage capacitance of 30 fF, 7-nm-SiO/sub 2/-equivalent dielectric film, and a storage node height of 0.5 mu m.Keywords
This publication has 1 reference indexed in Scilit:
- Thin nitride films on textured polysilicon to increase multimegabit DRAM cell charge capacityIEEE Electron Device Letters, 1990