Thin nitride films on textured polysilicon to increase multimegabit DRAM cell charge capacity
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (7) , 279-281
- https://doi.org/10.1109/55.56474
Abstract
A technique for increasing the charge storage capacity of advanced multimegabit dynamic RAMs (DRAMs) up to 34% without changing the cell area or dielectric thickness is discussed. The technique does not require an additional masking step. A polysilicon texturing process is combined with a dielectric which has bulk-limited electrical conduction. The leakage current is not affected by this process, and the field acceleration coefficient is considerably increased.Keywords
This publication has 9 references indexed in Scilit:
- Effect of Bottom Oxide on the Integrity of Interpolysilicon Ultrathin ONO (Oxide/Nitride/Oxide) FilmsJournal of the Electrochemical Society, 1990
- High Reliability of Ultrathin Improved SiN on Poly-SiJapanese Journal of Applied Physics, 1989
- Advanced cell structures for dynamic RAMsIEEE Circuits and Devices Magazine, 1989
- Reliability Comparison of Flotox and Textured-Polysilicon E2PROMs8th Reliability Physics Symposium, 1987
- Process technologies for high density, high speed 16 megabit dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Thermal SiO2films on n+polycrystalline silicon: Electrical conduction and breakdownIEEE Transactions on Electron Devices, 1986
- New ultra-high density textured Poly-Si floating gate EEPROM cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- A corrugated capacitor cell (CCC)IEEE Transactions on Electron Devices, 1984
- Novel high density, stacked capacitor MOS RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978