Advanced cell structures for dynamic RAMs
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 5 (1) , 27-36
- https://doi.org/10.1109/101.17236
Abstract
Recent major progress in the area of advanced DRAM cell structures is described, focusing on three-dimensional approaches. Cell design criteria are first outlined. Then a number of structures are discussed, namely, the stacked-capacitor cell, the trench-capacitor cell, the substrate-plate trench-capacitor cell, the dielectrically insulated trench cell, the buried stacked-capacitor cell, the folded-capacitor cell, the isolation-merged vertical-capacitor cell, the buried-capacitor or stacked transistor cell, and the trench transistor cell. Future trends in cell structures are projected.Keywords
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