Synthesis of silicon nitride films by ion beam enhanced deposition
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1) , 185-189
- https://doi.org/10.1016/0168-583x(89)90768-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Ion-Beam-Assisted Deposition and SynthesisMRS Bulletin, 1987
- Ion beam assisted deposition of substoichiometric silicon nitrideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profilesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Characterization of buried silicon-nitride formed by nitrogen implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- A study of buried silicon nitride layers formed by nitrogen implantation with a stationary beamNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- An In0.53Ga0.47As/Si3N4n-channel inversion mode MISFETIEEE Electron Device Letters, 1981
- Reactive Plasma Deposited Si-N Films for MOS-LSI PassivationJournal of the Electrochemical Society, 1978