Luminescence and electrical properties of ZnSe grown by photo-assisted OMVPE
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 48-51
- https://doi.org/10.1016/0022-0248(90)90934-d
Abstract
No abstract availableFunding Information
- Murata Science Foundation
- Mazda Foundation
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 8 references indexed in Scilit:
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- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnSJournal of Crystal Growth, 1988
- Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSeJapanese Journal of Applied Physics, 1987
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