Bend-resistance characteristics of macroscopic four-terminal devices with a high electron mobility
- 15 June 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (23) , 13465-13468
- https://doi.org/10.1103/physrevb.45.13465
Abstract
Bend-resistance characteristics are studied for four-terminal ballistic devices with a high electron mobility on a macroscopic scale of order 10–100 μm. The negative bend resistance induced by ballistic electron transport is quantitatively reproduced by the Landauer-Bu¨ttiker formula in the classical limit for various device sizes and electron densities. Using this formula, we determine the ballistic electron length as a function of electron density, which compares well with the elastic mean free path deduced from the electron mobility and electron density.Keywords
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