Electron correlation and phase-dependent electronic structure of
- 15 January 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (3) , 2281-2284
- https://doi.org/10.1103/physrevb.49.2281
Abstract
Highly ordered thin films of have been grown on GaAs(110). Temperature-dependent photoemission studies show changes in the valence-band electronic structure that are related to solid-state phase transitions at ∼280 and ∼340 K. The average on-site correlation energy for is determined to be 1.0±0.2 eV, based on comparison of the C KVV Auger spectrum with a self-convolution of the valence band obtained from photoemission.
Keywords
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