Influence of Ion Sputtering on Auger Electron Spectroscopy Depth-Profiling of GaAs/AlGaAs Superstructure
- 1 January 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (1R) , 149-150
- https://doi.org/10.1143/jjap.27.149
Abstract
The resolution of depth profiling by Auger electron spectrscopy (AES) changes depending on ion sputtering conditions due to implanted ion effects such as knock-on and cascade mixing. To evaluate the influence of these effects on depth profiling, profile broadening due to ion sputtering was measured using different levels of energy and species of ions. In addition, the altered layer's thickness was estimated.Keywords
This publication has 3 references indexed in Scilit:
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- Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-x As Multilayer StructureJapanese Journal of Applied Physics, 1985
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980