Molecular beam epitaxial growth and characterization of the dilute magnetic semiconductor Zn1−xFexSe
- 30 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (13) , 848-850
- https://doi.org/10.1063/1.98010
Abstract
We report the growth by molecular beam epitaxy of the dilute magnetic semiconductor Zn1−xFexSe on GaAs(100) substrates. The epilayers were characterized in situ by reflection high‐energy electron diffraction and Auger electron spectroscopy, and by x‐ray θ‐2θ and rocking curve measurements. We obtain the variation of lattice parameter and optical band gap for 0≤x≤0.22. Both increase linearly with Fe concentration in this range, but the increase is much less than that reported for Zn1−xMnxSe.Keywords
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