Preparation and Properties of CuInS2 Thin Films Produced by the Reactive Sputtering Method
- 1 April 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (4B) , L513-515
- https://doi.org/10.1143/jjap.34.l513
Abstract
Nearly stoichiometric CuInS2 thin films have been prepared on Pyrex slide glass by the reactive sputtering method using CS2 as a reactive gas at a substrate temperature of 150° C by controlling the CS2 partial pressure. Sputtering for 2 hours yields the thickness of 1∼2 µ m. The films are preferentially oriented with the (112) plane parallel to the substrate. The forbidden gap is estimated to be 1.51 eV which is slightly smaller than that of the single crystal. For films with fairly good stoichiometry, the conduction is p-type and the resistivity ranges between 10 and 104 Ω· cm. A fairly large amount of carbon is incorporated during growth.Keywords
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