Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (2) , 538-542
- https://doi.org/10.1109/16.658691
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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