Passivation Effect on Channel Recessed 4H-SiC MESFETs
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 749-752
- https://doi.org/10.4028/www.scientific.net/msf.433-436.749
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Channel recessed 4H-SiC MESFETs with F/sub t/ of 14.5GHz and F/sub max/ of 40GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Suppression of instabilities in 4H-SiC microwave MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopyJournal of Applied Physics, 2001
- Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETsMaterials Science and Engineering: B, 1999