Suppression of instabilities in 4H-SiC microwave MESFETs
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
SiC MESFETs can be susceptible to trapping induced instabilities which reduce the performance of the device at CW compared to pulsed operation. We show that surface passivation and the use of a gate recess can dramatically reduce the scale of the problem.Keywords
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