Insulator investigation on SiC for improved reliability
- 1 March 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (3) , 525-532
- https://doi.org/10.1109/16.748872
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Demonstration of a 6H-SiC CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis of gate dielectrics for SiC power UMOSFETSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low Interface State Density Oxides on P-Type SiCMaterials Science Forum, 1998
- Reduction of leakage current in chemical-vapor-deposited Ta/sub 2/O/sub 5/ thin films by furnace N/sub 2/O annealingIEEE Transactions on Electron Devices, 1997
- Thermally oxidized AlN thin films for device insulatorsApplied Physics Letters, 1997
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interfaceJournal of Electronic Materials, 1995
- Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypesApplied Physics Letters, 1994
- SiC MOS interface characteristicsIEEE Transactions on Electron Devices, 1994