Microwave power MESFET on 4H-SiC

This publication has 3 references indexed in Scilit:

• Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
  IEEE Electron Device Letters, 1996
• Comparison of SiC, GaAs, and Si RF MESFET power densities
  IEEE Electron Device Letters, 1995
• High performance of high-voltage 4H-SiC Schottky barrier diodes
  IEEE Electron Device Letters, 1995