Advances in SiC MOS Technology
- 1 July 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 162 (1) , 305-320
- https://doi.org/10.1002/1521-396x(199707)162:1<305::aid-pssa305>3.0.co;2-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaningApplied Physics Letters, 1996
- Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interfaceJournal of Electronic Materials, 1995
- Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypesApplied Physics Letters, 1994
- Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitorsJournal of Applied Physics, 1994
- Surface graphitization process of SiC(0001) single-crystal at elevated temperaturesSurface Science, 1985
- Improved MOS capacitor measurements using the Q-C methodSolid-State Electronics, 1984
- Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trappingIEEE Transactions on Electron Devices, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962