Improved MOS capacitor measurements using the Q-C method
- 1 November 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (11) , 963-975
- https://doi.org/10.1016/0038-1101(84)90070-4
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Non-equilibrium ψs vs Vg characteristics of MOS capacitors and related effectsSolid-State Electronics, 1982
- Dopant density from maximum-minimum capacitance ratio of implanted MOS structuresSolid-State Electronics, 1982
- Experimental technique for determining surface potential as a function of gate voltage of a MOS capacitorReview of Scientific Instruments, 1980
- Interpretation of C-V measurements for determining the doping profile in semiconductorsSolid-State Electronics, 1980
- Static technique for precise measurements of surface potential and interface state density in MOS structuresApplied Physics Letters, 1975
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962