Novel high drain breakdown voltage AlGaN/GaN HFETs using selective thermal oxidation process
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 377-380
- https://doi.org/10.1109/iedm.2000.904335
Abstract
We have developed novel selective thermal oxidation process for AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) and realized extremely high device isolation and high drain breakdown voltage device of over 100 V. The leakage current of device isolation between two active islands exhibited drastic reduction of 5 order of magnitude smaller than that of conventional mesa isolation process. Moreover, the fabricated 1.3 /spl mu/m-gatelength AlGaN/GaN HFETs exhibited maximum transconductance (gm/sub max/) of 130 mS/mm, maximum drain current (I/sub max/) of 500 mA/mm and excellent pinch off characteristics at high drain voltage of over 120 V.Keywords
This publication has 7 references indexed in Scilit:
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- High-power 10-GHz operation of AlGaN HFET's on insulating SiCIEEE Electron Device Letters, 1998
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHzIEEE Electron Device Letters, 1997
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaNJournal of Applied Physics, 1997
- CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHzIEEE Electron Device Letters, 1996
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993