Infrared spectroscopy and secondary ion mass spectrometry of luminescent, nonluminescent, and metal quenched porous silicon
- 15 August 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (4) , 2423-2428
- https://doi.org/10.1063/1.357591
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Behavior of porous silicon emission spectra during quenching by immersion in metal ion solutionsApplied Physics Letters, 1994
- Quenching of porous silicon photoluminescence by deposition of metal adsorbatesJournal of Applied Physics, 1993
- Correlation between silicon hydride species and the photoluminescence intensity of porous siliconApplied Physics Letters, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Intense photoluminescence from laterally anodized porous SiApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfacesPhysical Review B, 1988
- Secondary ion mass spectrometry profiling of shallow, implanted layers using quadrupole and magnetic sector instrumentsJournal of Vacuum Science & Technology A, 1987
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Infrared Lattice Absorption Bands in Germanium, Silicon, and DiamondPhysical Review B, 1954