Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition
- 14 December 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (24) , 1992-1994
- https://doi.org/10.1063/1.98321
Abstract
We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self‐ions and a bias potential of 1 kV was applied to the substrate during deposition. X‐ray diffraction (pole figure) revealed that one of the two possible twin structures, with the Al〈1̄10〉∥Si〈1̄10〉 orientation, was preferentially grown on the Si substrate.Keywords
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