Preparation and optical properties of wide gap II–VI compounds
- 15 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 11 (1-4) , 1-9
- https://doi.org/10.1016/0921-5107(92)90180-h
Abstract
No abstract availableKeywords
This publication has 71 references indexed in Scilit:
- p-Doping of epitaxial ZnSe using group I elementsJournal of Crystal Growth, 1990
- Use of dimethyl hydrazine as a new acceptor-dopant source in metalorganic vapor phase epitaxy of ZnSeJournal of Crystal Growth, 1990
- Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxyJournal of Crystal Growth, 1990
- Growth of MBE ZnSxSe1−x using a novel electrochemical sulphur sourceJournal of Crystal Growth, 1990
- Atomic layer epitaxy of ZnSe-ZnTe strained layer superlatticesJournal of Crystal Growth, 1989
- A study of growth mechanism of ZnS and ZnSe in MOMBE using dimethylzinc and chalcogen hydrides as reactantsJournal of Crystal Growth, 1989
- Photo-assisted MBE growth of ZnSe crystalsJournal of Crystal Growth, 1989
- The growth by MOCVD using new group VI sources and assessment by HRTEM and Cl of Zn-based II–VI single crystal layersJournal of Crystal Growth, 1985
- Metalorganic chemical vapour deposition of wide band gap II–VI compoundsJournal of Crystal Growth, 1984
- Hot wall epitaxy of II–VI compounds: CdS and CdTeThin Solid Films, 1982