Growth of MBE ZnSxSe1−x using a novel electrochemical sulphur source
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 176-179
- https://doi.org/10.1016/0022-0248(90)90960-s
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Lattice strain and its effects on energy band structure in MBE-ZnSxSe1−x/GaAsJournal of Crystal Growth, 1989
- Recent advances in the molecular beam epitaxy of the wide-bandgap semiconductor ZnSe and its superlatticesIEEE Journal of Quantum Electronics, 1988
- Structural characterization of GaAs/ZnSe interfacesJournal of Vacuum Science & Technology B, 1988
- Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Metalorganic molecular-beam epitaxy of ZnSe and ZnSJournal of Applied Physics, 1987
- MBE Of ZnSe On GaAs EpilayersPublished by SPIE-Intl Soc Optical Eng ,1987
- Influence of growth conditions on undoped and sulfur-doped InP grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- Growth of ZnS Se1− by MBE on (100)GaAs substrates: Effect of lattice-matchingJournal of Crystal Growth, 1985
- The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Electrochemical sulfur doping of GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1981