Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy
- 1 December 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (12) , 7214-7218
- https://doi.org/10.1063/1.328705
Abstract
A novel method of intentionally doping molecular beam epitaxy grown GaAs n- type is described. The donor atoms are sulfur, from a beam of S2, generated in a low temperature (200 °C), electrochemical Knudsen cell. The galvanic cell is Pt/Ag/AgI/Ag2S/Pt, where the flow of current through the cell, with the positive pole at the Ag2S is a measure of the sulfur flux effusing from the cell. Net carrier concentrations n between ∼1015 and ∼1018 cm−3 have been obtained. There is no detectable accumulation of S at the surface for high donor concentrations (∼1018 cm−3) in the bulk. This novel method of sulfur generation has a particularly fast (<1 sec) response time—much faster than the thermal equilibration times of conventional thermal Knudsen sources. Complicated doping profiles are shown to be produced relatively easily with a single doping source using this technique. Free-electron mobilities μ300 K = 6000 cm2/V sec and μ77 K = 17 000 cm2/V sec have been obtained for sulfur doped layers with n = 1.1016 cm−3.This publication has 11 references indexed in Scilit:
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