Growth of ZnS Se1− by MBE on (100)GaAs substrates: Effect of lattice-matching
- 24 July 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2) , 41-45
- https://doi.org/10.1016/0022-0248(85)90115-0
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology (58550217, 59550219)
This publication has 10 references indexed in Scilit:
- High-quality ZnSe thin films grown by molecular beam epitaxyApplied Physics Letters, 1983
- Growth of Zinc Sulfo-Selenide Single Crystals and Their Near Band-Edge PhotoluminescenceJapanese Journal of Applied Physics, 1983
- Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature EffectJapanese Journal of Applied Physics, 1983
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting DiodesJapanese Journal of Applied Physics, 1982
- Molecular beam epitaxy of zinc chalcogenidesJournal of Crystal Growth, 1981
- Molecular Beam Epitaxial Growth of ZnTe and ZnSeJournal of the Electrochemical Society, 1980
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963