Third-harmonic generation in an AlGaAs/AlAs superlattice
- 15 June 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (12) , 5202-5204
- https://doi.org/10.1063/1.343152
Abstract
Third‐harmonic generation in an AlGaAs/AlAs superlattice is observed for the first time at a pump‐light wavelength of around 2 μm. The value of third‐order optical susceptibility χ(3), for the polarization parallel to the superlattice layer in a nonresonant region, is close to that reported for bulk GaAs. Enhancement of χ(3), giving more than three times the nonresonant value, is observed near a three‐photon resonance region. A characteristic third‐harmonic signal is observed when the pump‐light polarization has a component perpendicular to the superlattice layer. This is considered to be another χ(3) enhancement which is caused by nonparabolicity in the superlattice.This publication has 10 references indexed in Scilit:
- Optical third-harmonic generation from poly(2,5-thienylene vinylene) thin filmsApplied Physics Letters, 1988
- Nonlinear excitonic optical absorption in GaInAs/InP quantum wellsApplied Physics Letters, 1987
- Comparison between GaAs and AlxGa1-xAs Quantum Wells in the Light Emission LimitJapanese Journal of Applied Physics, 1985
- Corrections to enhanced optical nonlinearity of superlatticesApplied Physics Letters, 1984
- Third-order optical nonlinearity induced by effective mass gradient in heterostructuresApplied Physics Letters, 1983
- Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structuresApplied Physics Letters, 1982
- Third-harmonic generation in semiconductors with a superlatticeRadiophysics and Quantum Electronics, 1976
- Third-Harmonic Generation in Absorbing Media of Cubic or Isotropic SymmetryPhysical Review B, 1971
- Nonlinear Optical Response of Conduction Electrons in a SuperlatticeApplied Physics Letters, 1971
- Optical Third-Order Mixing in GaAs, Ge, Si, and InAsPhysical Review B, 1969