A simplistic model for reverse annealing in irradiated silicon
- 1 January 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 95 (1) , 41-49
- https://doi.org/10.1016/0168-583x(94)00320-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experimentsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Radiation damage by neutrons and protons to silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992