Reduction of surface recombination current in GaAs p-n junctions
- 1 May 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (9) , 594-596
- https://doi.org/10.1063/1.90886
Abstract
Planar Zn‐diffused GaAs p‐n junctions have been prepared with a 2000‐Å surface layer of high‐resistivity O‐doped Al0.5Ga0.5As. This surface layer significantly reduces the surface recombination current and permits the bulk diffusion current, I∝exp(qV/kT), to dominate at current densities as low as ∼5×10−3 A/cm2.Keywords
This publication has 9 references indexed in Scilit:
- Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free-carrier gratingsApplied Physics Letters, 1978
- Effect of interface recombination at AlxGa1−xAs p–n junction perimeters on photoluminescence and currentJournal of Vacuum Science and Technology, 1978
- The effect of surface recombination on current in AlxGa1−xAs heterojunctionsJournal of Applied Physics, 1978
- Effect of surface treatment on surface recombination velocity and diode leakage current in GaPJournal of Vacuum Science and Technology, 1976
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Green-emitting diodes in vapor phase epitaxial GaPSolid-State Electronics, 1975
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Surface effects of GaAs0·6P0·4 light emitting diodesSolid-State Electronics, 1973
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973