Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
Top Cited Papers
- 18 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (7) , 1204-1206
- https://doi.org/10.1063/1.1448668
Abstract
We provide explicit rules to calculate the nonlinear polarization for nitride alloys of arbitrary composition, and hence, the bound sheet charge induced by polarization discontinuity at the interfaces between different alloy and binary (epi)layers. We then present experimental results and simulations of polarization-related quantities in selected nitride-alloy-based heterostructure systems. The agreement of experiment and simulation, also in comparison to previous approaches, strongly suggests that the macroscopic polarization of nitride alloys is indeed nonlinear as a function of composition.Keywords
This publication has 15 references indexed in Scilit:
- Nonlinear macroscopic polarization in III-V nitride alloysPhysical Review B, 2001
- First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theoryPhysical Review B, 2001
- Characterization of InGaN thin films using high-resolution x-ray diffractionApplied Physics Letters, 2000
- Built-in electric-field effects in wurtzite AlGaN/GaN quantum wellsJournal of Applied Physics, 1999
- Effects of macroscopic polarization in III-V nitride multiple quantum wellsPhysical Review B, 1999
- Giant electric fields in unstrained GaN single quantum wellsApplied Physics Letters, 1999
- Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wellsApplied Physics Letters, 1998
- Macroscopic polarization and band offsets at nitride heterojunctionsPhysical Review B, 1998
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN filmsApplied Physics Letters, 1997