Characterization of InGaN thin films using high-resolution x-ray diffraction
- 24 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (5) , 577-579
- https://doi.org/10.1063/1.125822
Abstract
Wurtzite InGaN thin films grown by metalorganic chemical vapor deposition on sapphire substrates with and without GaN buffer layers are investigated by high-resolution x-ray diffraction measurements. The structural quality, lattice constants, strain, and indium composition of 100 nm thick films with In concentrations up to 33% are evaluated by measuring symmetric (00.2) and asymmetric (20.5) reflexes. The quality of the InGaN layers with widely different biaxial stress is measured and compared. An analytical solution for the determination of the In content of strained epitaxial layers is introduced. The results show that neglecting the strain can result in a severe miscalculation of the In concentration.Keywords
This publication has 10 references indexed in Scilit:
- Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction dataJournal of Physics D: Applied Physics, 1999
- Structural and optical properties of pseudomorphic InxGa1−xN alloysApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substratesJournal of Applied Physics, 1997
- Elastic properties of zinc-blende and wurtzite AlN, GaN, and InNJournal of Applied Physics, 1997
- Compositional inhomogeneity and immiscibility of a GaInN ternary alloyApplied Physics Letters, 1997
- Characterization of InGaN multiquantum well structures for blue semiconductor laser diodesApplied Physics Letters, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetimeApplied Physics Letters, 1997
- Thermal expansion of gallium nitrideJournal of Applied Physics, 1994
- A high-resolution multiple-crystal multiple-reflection diffractometerJournal of Applied Crystallography, 1989