Preparation of one-dimensional single and multi-layered quantum wire structures by ultrafine deep mesa etching techniques
- 31 May 1989
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 9 (1-4) , 357-360
- https://doi.org/10.1016/0167-9317(89)90078-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- One-dimensional subbands of narrow electron channels in gated As/GaAs heterojunctionsPhysical Review B, 1988
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988
- Magnetic depopulation of subbands and universal conductance fluctuations in quasi-one dimensional GaAsAlGaAs heterostructuresSuperlattices and Microstructures, 1987
- Quenching of the Hall Effect in a One-Dimensional WirePhysical Review Letters, 1987
- Quantum transport in an electron-wave guidePhysical Review Letters, 1987
- Experimental determination of the edge depletion width of ahe two-dimensional electron gas in GaAs/AlxGa1−xAsApplied Physics Letters, 1987
- Magnetic Depopulation of 1D Subbands in a Narrow 2D Electron Gas in a GaAs:AlGaAs HeterojunctionPhysical Review Letters, 1986
- One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs HeterojunctionPhysical Review Letters, 1986
- Reactive ion etching of GaAs and InP using SiCl4Journal of Vacuum Science & Technology B, 1983
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980