Fabrication, RE performance, and yield of a combined limiting amplifier and dual-modulus prescalar GaAs IC chip
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 36 (12) , 1706-1713
- https://doi.org/10.1109/22.17403
Abstract
Production technology details, RF performance, and yield results for an ECL-compatible, L-band, limiting dual-modulus (/10/11) prescalar are presented. Monolithic integration of analog and digital circuit functions is achieved using refractory self-aligned-gate FET technology. When tested with -22-dBm input signal power, one lot of six wafers had a total RF chip yield of 19% with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (SD=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).Keywords
This publication has 2 references indexed in Scilit:
- A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICsIEEE Transactions on Electron Devices, 1988
- TiW nitride thermally stable Schottky contacts to GaAs: Characterization and application to self-aligned gate field-effect transistor fabricationJournal of Vacuum Science & Technology B, 1987