Recent advances in strain gauges
- 1 July 1964
- journal article
- Published by IOP Publishing in Journal of Scientific Instruments
- Vol. 41 (7) , 405-414
- https://doi.org/10.1088/0950-7671/41/7/301
Abstract
The basic principles of resistance strain gauges are described and recent developments in the fields of semiconductor strain gauges and high-temperature strain gauges are discussed. Semiconductor strain gauges are much more sensitive than the metal ones commonly used but special circuit arrangements are often necessary if high accuracy is to be retained. Techniques for the measurement of static strains up to about 400°C are well established. The introduction of two new strain gauge alloys offers the prospect of increasing this range to about 1000°C.Keywords
This publication has 10 references indexed in Scilit:
- Recent developments in semiconductor piezoresistive devicesSolid-State Electronics, 1963
- High temperature resistance strain gaugesBritish Journal of Applied Physics, 1963
- Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance EffectsJournal of Applied Physics, 1961
- On the transverse-strain sensitivity of foil gagesExperimental Mechanics, 1961
- Semiconductor Strain TransducersBell System Technical Journal, 1960
- The Piezoresistive Effect and its ApplicationsReview of Scientific Instruments, 1960
- Deutung des Mechanismus des Dehnungsmeßstreifens und seiner wichtigsten Eigenschaften an Hand eines Modells / Interpretation of the mechanism of the strain gage and of its most important properties shown at a model / Interpretation du mecanisme d’une jauge ä fil resistant et de ses qualites les plus importantes montre a l’aide d’un modeleMaterials Testing, 1959
- Resistance strain gauges of low temperature sensitivityJournal of Scientific Instruments, 1959
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954