An analytical IGBT model for power circuit simulation
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistorSolid-State Electronics, 1988
- An analytical model for the power bipolar-MOS transistorSolid-State Electronics, 1986
- Charge-control analysis of the COMFET turn-off transientIEEE Transactions on Electron Devices, 1986
- The insulated gate transistor: A new three-terminal MOS-controlled bipolar power deviceIEEE Transactions on Electron Devices, 1984
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983