An analytical model for the power bipolar-MOS transistor
- 31 December 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (12) , 1229-1237
- https://doi.org/10.1016/0038-1101(86)90128-0
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Modeling the turn-off characteristics of the bipolar-MOS transistorIEEE Electron Device Letters, 1985
- Analysis of insulated gate transistor turn-off characteristicsIEEE Electron Device Letters, 1985