The properties of gallium arsenide doubly doped with silicon and germanium or silicon and tin
- 30 November 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (3) , 619-624
- https://doi.org/10.1016/0022-0248(80)90005-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Growth of GaAs ingots with high free electron concentrationsJournal of Crystal Growth, 1980
- Silicon donor-acceptor pair defects in gallium arsenideJournal of Physics C: Solid State Physics, 1979
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978
- The strength of the infrared absorption from silicon donors and silicon acceptors in gallium arsenideJournal of Physics C: Solid State Physics, 1976
- Determination of Fermi-level effect on Si-site distribution in GaAs : SiJournal of Applied Physics, 1974
- Infrared absorption of mixed silicon isotope pairs in gallium arsenideJournal of Applied Physics, 1974
- The behaviour of boron impurities in n-type gallium arsenide and gallium phosphideJournal of Physics C: Solid State Physics, 1974