Secondary ion mass spectrometry depth profiling and simultaneous electrical investigation of MOS structures
- 15 June 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 51 (3) , 275-285
- https://doi.org/10.1016/0040-6090(78)90289-4
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidationSurface Science, 1977
- Relationships of the Chemical and Electrical Interfacial Properties of Germanium ‐ SiO2 SystemsJournal of the Electrochemical Society, 1976
- Auger depth profiling of interfaces in MOS and MNOS structuresJournal of Vacuum Science and Technology, 1976
- Interface states on semiconductor/insulator surfacesC R C Critical Reviews in Solid State Sciences, 1976
- Correlation of surface states with impuritiesC R C Critical Reviews in Solid State Sciences, 1975
- Comparative study of Si(111), silicon oxide, SiC and Si3N4 surfaces by secondary ion mass spectroscopy (SIMS)Thin Solid Films, 1975
- Mechanism of electrical breakdown in SiO2 filmsJournal of Applied Physics, 1975
- Dependence of MOS Device Radiation-Sensitivity on Oxide ImpuritiesIEEE Transactions on Nuclear Science, 1972
- Low Energy Ion Bombardment Effects in SiO2IEEE Transactions on Nuclear Science, 1972
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967