Correlation of surface states with impurities
- 1 October 1975
- journal article
- research article
- Published by Taylor & Francis in C R C Critical Reviews in Solid State Sciences
- Vol. 5 (3) , 319-325
- https://doi.org/10.1080/10408437508243490
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Determination of deep trap levels in silicon using ion-implantation and CV-measurementsApplied Physics A, 1974
- Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solidsRadiation Effects, 1973
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972
- Analyses de couches minces de silice par emission ionique secondaireMaterials Research Bulletin, 1971
- Enhanced Diffusion and Out-Diffusion in Ion-Implanted SiliconJournal of Applied Physics, 1970
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATINGApplied Physics Letters, 1968