Strain-induced effects on the performance of AlGalnP Visible Lasers

Abstract

We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.

Keywords

QUANTUM WELL LASERS
QUANTUM WELL DEVICES
THRESHOLD CURRENT
MIRRORS
CURRENT DENSITY
CARRIER CONFINEMENT
RESEARCH AND DEVELOPMENT
LABORATORIES
DIODE LASERS
LIGHT SOURCES

This publication has 2 references indexed in Scilit:

High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes
Applied Physics Letters, 1991
Very low threshold current AlGaInp/Ga _x In _1−x P strained single quantum well visible laser diode
Electronics Letters, 1990