Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
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- 1 February 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (2A) , L79
- https://doi.org/10.1143/jjap.39.l79
Abstract
We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observed by photoluminescence measurements. It was confirmed that this new modified droplet epitaxy method is promising for fabricating a high-quality GaAs/AlGaAs QD system.Keywords
This publication has 12 references indexed in Scilit:
- Fabrication of Self-Assembled GaAs/AlGaAs Quantum Dots by Low-Temperature Droplet EpitaxyJapanese Journal of Applied Physics, 1998
- Growth and optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressorApplied Physics Letters, 1998
- Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal–organic chemical-vapor depositionApplied Physics Letters, 1998
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular BeamsJapanese Journal of Applied Physics, 1993
- New selective molecular-beam epitaxial growth method for direct formation of GaAs quantum dotsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Real-time μ-RHEED observations of GaAs surfaces during growth with alternating source supplyJournal of Crystal Growth, 1991
- New MBE growth method for InSb quantum well boxesJournal of Crystal Growth, 1991
- In-situ observation of roughening process of MBE GaAs surface by scanning reflection electron microscopyJournal of Crystal Growth, 1990
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988