Source and drain resistance studies of short-channel MESFETs using two-dimensional device simulators
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3) , 775-780
- https://doi.org/10.1109/16.47785
Abstract
No abstract availableKeywords
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