Single event induced transients in I/O devices: a characterization
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1974-1980
- https://doi.org/10.1109/23.101217
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Physical SEU model for circuit simulationsIEEE Transactions on Nuclear Science, 1988
- Trends in Parts Susceptibility to Single Event Upset from Heavy IonsIEEE Transactions on Nuclear Science, 1985