Novel Method for Measuring Intensity Distribution of Focused Ion Beams
- 1 December 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (12A) , L780
- https://doi.org/10.1143/jjap.22.l780
Abstract
We have developed a method for directly measuring the diameter of finely-focused ion beams from the response of the secondary electron emission that is obtained when the focused ion beam is scanned across the boundary of an AlGaAs/GaAs junction. Si and Be ion beams with diameters of less than 0.1 µm have been measured with an accuracy of 5% by this method. Thus, this technique is found useful for monitoring beam diameter during the maskless implantation process. Actually, this technique has been used for monitoring the diameters of Be and Si ion beams for the implantation of those beams into GaAs.Keywords
This publication has 6 references indexed in Scilit:
- Measurement of virtual crossover in liquid gallium ion sourceApplied Physics Letters, 1983
- A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound SemiconductorsJapanese Journal of Applied Physics, 1983
- Scanning microbeam using a liquid metal ion sourceJournal of Vacuum Science and Technology, 1982
- FET fabrication using maskless ion implantationJournal of Vacuum Science and Technology, 1981
- High-resolution, ion-beam processes for microstructure fabricationJournal of Vacuum Science and Technology, 1979
- Interface studies of AlxGa1−xAs-GaAs heterojunctionsJournal of Applied Physics, 1979